SS8550 L(120-200)(SOT-23)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors JC(T SS8050 TRANSISTOR (NPN) SOT-323 FEATURES Complimentary to SS8550 1. BASE 2. EMITTER MARKING: Y1 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1.5 A PC Collector Power Dissipation 250 mW Thermal Resistance From Junction To Ambient 500 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 μA Collector cut-off current ICEO VCE=20V, IE=0 0.1 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA hFE(1) VCE=1V, IC= 100mA 120 hFE(2) VCE=1V, IC= 800mA 40 DC current gain 400 Collector-emitter saturation voltage VCE(sat) IC=800mA, IB= 80mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=800mA, IB= 80mA 1.2 V fT Transition frequency Cob Collector output capacitance VCE=10V, IC= 50mA, f=30MHz VCB=10V,IE=0,f=1MHz 100 MHz 15 pF CLASSIFICATION OF hFE(1) Rank Range www.cj-elec.com L H J 120-200 200-350 300-400 1 A,Jun,2014 B,Sep,2014 Typical Characteristics Static Characteristic COMMON EMITTER Ta=25℃ 0.25 800uA DC CURRENT GAIN 0.20 600uA 0.15 500uA 0.10 400uA Ta=25℃ 100 300uA 0.05 200uA IB=100uA 0.00 0.0 0.5 1.0 COLLECTOR-EMITTER VOLTAGE VCEsat 1000 VCE 2.0 1 VBEsat 2000 Ta=25℃ 10 1000 1000 1500 100 COLLECTOR CURRENT Ta=100℃ 100 10 (V) IC —— VCE=1V 10 1.5 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURRENT IC —— Ta=100℃ 700uA IC (A) 900uA COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) hFE 1000 1000uA hFE 0.30 IC (mA) IC —— Ta=25℃ Ta=100℃ β=10 β=10 1 100 1 10 COLLECTOR CURRENT VBE 1500 1000 1500 100 IC 1 10 (mA) 100 COLLECTOR CURRENT —— IC Cob/ Cib 200 1000 1500 (mA) IC —— VCB/ VEB f=1MHz IE=0/IC=0 1000 100 Ta=25℃ (pF) Ta=100℃ C 100 CAPACITANCE COLLCETOR CURRENT IC (mA) Cib Ta=25℃ 10 1 200 VCE=1V 300 400 500 600 700 BASE-EMMITER VOLTAGE fT —— 900 1 (mV) 10 REVERSE VOLTAGE IC PC 300 COLLECTOR POWER DISSIPATION PC (mW) fT TRANSITION FREQUENCY 10 1 0.1 1000 (MHz) 1000 VBE 800 Cob 100 10 —— V 20 (V) Ta 250 200 150 100 50 VCE=10V Ta=25℃ 1 0 1 10 COLLECTOR CURRENT www.cj-elec.com 100 IC 0 (mA) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) A,Jun,2014 B,Sep,2014 SOT-323 Package Outline Dimensions Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.200 0.400 0.080 0.150 2.000 2.200 1.150 1.350 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.008 0.016 0.003 0.006 0.079 0.087 0.045 0.053 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° SOT-323 Suggested Pad Layout www.cj-elec.com 3 B,Sep,2014 A,Jun,2014 SOT-323 Tape and Reel www.cj-elec.com 4 B,Sep,2014 A,Jun,2014